Gallium Arsenide (GaAs) Next Generation Semiconductors, Market Shares, Market Forecasts, Market Analysis, 2020-2026
Report Code: KNJ209578
Publisher: Date of Publish:
No. of Pages: 212 Category: Technology Publisher: Date of Publish:
LEXINGTON, Massachusetts (February 26, 2020) – WinterGreen Research announces that it has a new study on Gallium Arsenide (GaAs) Next Generation Semiconductors, Market Shares, Market Forecasts, Market Analysis, 2020-2026. The 2020 study has 212 pages, 116 tables and figures. GaAs represents next generation semiconductors, a market that is $500 billion dollars in 2020. Next generation GaAs semiconductors promise to bring a huge market, not totally replacing the existing semiconductor market, but ultimately making a huge dent in it. The ability to replace silicon semiconductors, a market that is $500 billion dollars in 2020 makes one sit up and take notice. The existing silicon semiconductor market is pretty good size for a market that barely existed in 1975. Next generation GaAs support the signal speed that is needed to implement 5G. GaAs works in a way that silicon cannot. The potential for the next generation GaAs wafers is staggering, with the overall semiconductor market likely to surpass $20 trillion by 2026 as the new industrial revolution takes hold and 5G supports IoT that connects all things together. Once economies of scale are realized these semiconductor GaAs markets are expected to really take off. The sheer size of the global semiconductor market at $500 billion dollars in 2020 shows that the potential for a next generation semiconductor technology is truly exciting. The gallium arsenide wafers are next generation technology because they operate faster than the silicon semiconductors, they support a new, faster network called 5G. Gallium arsenide GaAs represents the next generation of semiconductor chips because the chips can do things that the silicon chips cannot do. GaAs does have a considerably higher bandgap than silicon. It is a direct band gap semiconductor with a zinc blende crystal structure. Sensing for autonomous and electric vehicles is one use of the technology. 3D Sensing for consumer electronics and use for lasers is common. Units are used in radar and lasers. The benefits of using GaAs in devices derive in part from the characteristic that GaAs generates less noise than most other types of semiconductor components. As a result, it is useful in weak-signal amplification applications. Due to these benefits related to generating less noise, GaAs is a suitable replacement for silicon in the manufacture of linear and digital ICs. A gallium arsenide wafer is also known as Gallium arsenide substrate. Economies of scale for gallium arsenide promise to make the technology viable. Silicon commercial advantage is that it is a thousand times cheaper to make. As we move into the 5G era, that advantage will dissipate because of the volume of GaAs components that are made to meet demand permitting vendors to leverage economies of scale. Gallium arsenide material technical advantages over silicon are that electrons race through its crystalline structure faster than they can move through silicon. Cellphones, typically rely on speedy gallium arsenide chips to process the high-frequency radio signals that arrive faster than silicon can handle. Unlike silicon cells, Gallium Arsenide cells are relatively insensitive to heat. Alloys made from GaAs using Al, P, SB, or In have characteristics complementary to those of GaAs, allowing great flexibility. GaAs is very resistant to radiation damage. This, along with its high efficiency, makes GaAs very desirable for space applications. GaAs biggest drawback is the is the high cost of a single-crystal GaAs substrate which has been a barrier to volume manufacturing. GaAs markets at $3.8 billion in 2020 promise to grow to $22 billion by 2026. With the opportunity to participate in the 5G next generation semiconductor markets. Gallium arsenide components will achieve broad economies of scale, making them far more affordable and more available. Companies Profiled (Market Leaders): - Sumitomo Electric II-VI Incorporated IQE Corporation Freiberger Compound Materials AXT China Crystal Technologies Shenzhou Crystal Technology Tianjin Jingming Electronic Materials Yunnan Germanium DOWA Electronics Materials Companies Profiled Participating in the Gallium Arsenide Semiconductor Industry: - Advanced Wireless Semiconductor, Anadigics / GaAs Labs, Avago Technologies, BWT, Cree Billion Dollar Commitment to SiC Mosfets, Hanergy Holdings / AltaDevices, Hittite Microwave, M/A-COM Technology Solutions, Murata Manufacturing, Qorvo, RFMD, Skyworks Solutions, Tianjin Jingming Electronic Materials, Texas Instruments: LMG3410R050 GaN Device, TriQuint Semiconductor Inc, Yunnan Lincang Xinyuan Germanium Industry Co, Umicore, Vishay Gallium Arsenide LEDs, WIN Semiconductors Key Topics for Lithium Ion Battery Markets Report: GaAs Gallium Arsenide Components Next Generation Semiconductors 3D Sensing in Lidar Lasers 3D Sensing in Consumer Electronics 3D Sensing in Autonomous Vehicles Optical Infrastructure Optical Datacenters 4G Remote Radioheads 5G Beam Forming We supports various market segment programs; provides trusted technical services to the marketing departments. It carries out accurate market share and forecast analysis services for a range of commercial and government customers’ globally. These are all vital market research support solutions requiring trust and integrity.
Gallium Arsenide Components: The study is designed to give a comprehensive overview of the Gallium Arsenide Components market. Research represents a selection from the mountains of data available of the most relevant and cogent market materials, with selections made by the most senior analysts. Commentary on every aspect of the market from independent analysts creates an independent perspective in the evaluation of the market. In this manner the study presents a comprehensive overview of what is going on in this market, assisting managers with designing market strategies likely to succeed. Table of Contents: Abstract: Gallium Arsenide Semiconductors Indium Phosphide, Gallium Nitride And Silicon Carbide Related Markets 1 Gallium Arsenide Semiconductors and Powders Executive Summary 8 Economies of Scale for Gallium Arsenide 9 1. Gallium Arsenide Semiconductors: Market Description and Market Dynamics 11 1.1 Gallium Arsenide (GaAs) 11 1.1.1 Gallium Arsenide (GaAs) Advantages 11 1.1.2 Gallium Arsenide (GaAs) Overcomes Disadvantages 12 1.1.3 Working Electronic Circuits in a Gallium Arsenide Device 14 1.1.4 Gallium and Arsenic High-Pressure Synthesis of GaAs 14 1.2 Crystal Growth 15 1.2.1 VGF Crystal Growth Process 15 1.2.2 GaAs LEC Crystal Growth Process 17 1.2.3 Crystal Annealing 19 1.3 GaAs Crystal Analysis 20 1.4 Converting a GaAs Crystal Into Wafers - Mechanical Wafering 21 1.5 GaAs Sawing 22 1.6 Gallium Arsenide (GaAs) 25 2. Gallium Arsenide Semiconductors Market Shares and Forecasts 26 2.1 Gallium Arsenide Next Generation Semiconductors Market Driving Forces 26 2.1.1 Gallium Arsenide vs. Silicon Semiconductors 28 2.2 Gallium Arsenide Components and Powders Market Shares 28 2.3 Gallium Arsenide Components and Powders Market Forecasts, Units and Dollars 36 2.3.1 Gallium Arsenide GaAs Unit Analysis 39 2.4 Gallium Arsenide Semiconductor Market Segments 40 2.4.1 GaAs VGF vs GaAs LEC % Market Share 41 2.4.2 Gallium Arsenide (GaAs) in Cell Phones 42 2.4.3 Gallium Arsenide LEDs 43 2.5 Gallium Arsenide Semiconductor Regional Market Analysis 44 3. Gallium Arsenide, SIC, and InD Market Size by Sector 47 3.1 GaAs Wide Bandgap Material 47 3.2 GaAs Dollars - 3D Sensing for Autonomous And Electric Vehicles, 3D Sensing for Consumer lectronics, and More, Summary 47 3.3 3D Sensing for Autonomous And Electric Vehicles and 3D Sensing for Consumer Electronics, Units and Dollars 49 3.4 GaAs Units 51 3.5 GaAs, InP Segment Analysis Optical Infrastructure and Datacenters, Dollars,Units, and Percent, Worldwide, 2019 to 2022 52 3.6 GaAs and InP Segment Analysis 4G Remote Radioheads, 5G Beam Forming Antennae, 5G RF Electronics, Dollars, Worldwide, 2019 to 2022 55 3.9 SIC Segment Analysis Electric Vehicles, Smart Grid Power, Switching, Solar and Wind Energy, Dollars, Units, and Percent, Worldwide, 2019 to 2022, 61 3.6.1 Solar 62 4 Gallium Arsenide Next Generation Semiconductors Research and Technology 67 4.1 Silicon and GaAs Crystal Structure 67 4.1.1 GaAs and Other Compound Semiconductors Characteristics Comparison 68 4.2 Silicon and Gallium Arsenide Energy Band Structure 69 4.3 GaAs in Solar 74 4.4 Gallium arsenide (GaAs) Advantages over Silicon 75 4.5 CMOS Wideband Switches 76 4.6 SIC 78 4.6.1 Gallium Nitride 79 4.7 Bandgaps in Different Semiconductor Materials 79 4.7.1 Comparing GaAs, Si, SiC, and GaN Bandgaps 80 4.7.2 Gallium Nitride and Silicon Carbide 80 4.8 Gallium Nitride 82 4.9 Epitaxial Growth: Complex Series of Chemical Layers Grown on Top of Wafers84 4.10 GaAs Environmental Aspects 84 5 Gallium Arsenide Semiconductors Company Profiles 85 5.1 Advanced Wireless Semiconductor 85 5.2 Anadigics / GaAs Labs 85 5.3 Avago Technologies 85 5.4 AXT 86 5.4.1 AXT InP 89 5.4.2 AXT Ge 89 5.4.3 Semi-insulating GaAs 89 5.4.4 AXT Raw Materials 90 5.5 BWT 97 5.5.1 BWT Has Been Focusing On Fiber Pigtailed Diode Laser Packaging And Assembly 98 5.5.2 BWT High Power, High Brightness, Fiber Coupled Diode Laser 103 5.6 China Crystal Technologies 103 5.6.1 China Crystal Technologies Revenue 111 5.7 Cree Billion Dollar Commitment to SiC Mosfets 113 5.8 DOWA Electronics Materials 114 5.9 Freiberger Compound Materials 118 5.9.1 GaAs Wafer Technologie - Freiberger Compound Materials 120 5.9.2 Freiberger High Pressure Synthesis of GaAs 121 5.9.3 Freiberger VGF Crystal Growth 122 5.9.4 Freiberger Crystal Annealing 123 5.9.5 Freiberger Electrical Properties of GaAs 124 5.9.6 Freiberger Mechanical Wafering 124 5.10 Hanergy Holdings / AltaDevices 126 5.10.1 Alta Devices Mass Production 128 5.10.2 Alta Devices Disrupting Traditional Solar Technologies 130 5.10.3 Alta Devices thin-film gallium arsenide solar technology 134 5.11 Hittite Microwave 135 5.12 IQE 135 5.12.1 ICE Geographical Revenue 137 5.12.2 ICE Sites and Technologies 138 5.13 M/A-COM Technology Solutions 139 5.14 Murata Manufacturing 139 5.15 Qorvo 140 5.16 RFMD 140 5.17 Shenzhou Crystal Technology 140 5.18 Skyworks Solutions 141 5.19 Sumitomo Electric 142 5.20 Tianjin Jingming Electronic Materials 143 5.21 Texas Instruments: LMG3410R050 GaN Device 143 5.22 TriQuint Semiconductor Inc 145 5.23 Yunnan Lincang Xinyuan Germanium Industry Co 145 5.24 Umicore 146 5.24.1 7.12.2 Umicore 146 5.25 Vishay Gallium Arsenide LEDs 152 5.26 WIN Semiconductors 152 5.27 II-VI 152 5.27.1 II-VI Finisar Acquisition 153 5.27.2 II-VI Reporting Segments 155 5.27.3 II-VI Incorporated 157 5.27.4 Finisar 158 5.27.5 II-VI Segment Revenue by End Markets for Full Year FY19 172 5.28 Selected Gallium Arsenide Market Participants 175 WinterGreen Research, 205 WinterGreen Research Methodology 205 WinterGreen Research Process 207 Market Research Study 207 WinterGreen Research Global Market Intelligence Company 208 Report Description: Next Generation Technology 209 List of Tables and Figures Abstract: Gallium Arsenide Semiconductors Indium Phosphide, Gallium Nitride And Silicon Carbide Related Markets 1 Figure 1. Gallium Arsenide Next Generation Semiconductor Components Market Forecasts, Dollars, Worldwide, 2020-2026 10 Figure 2. GaAs VGF Furnace Equipment 16 Figure 3. GaAs LEC Crystal Growth Process 17 Figure 4. GaAs LEC Crystal Growth Furnace 18 Figure 5. 2.1 GaAs Crystal Analysis 20 Figure 6. Crystal Grinding 21 Figure 7. GaAs Sawing 22 Figure 8. GaAs Wire Saw 23 Figure 9. GaAs Edge Rounding 24 Figure 10. Advantages of GaAs 27 Figure 11. Disadvantages of GaAS 27 Figure 12. Gallium Arsenide Components and Powders: Dollars, Market Shares Worldwide 2019 29 Figure 13. Gallium Arsenide Components and Powders: Dollars, Market Shares Worldwide 2019 30 Figure 14. Gallium Arsenide Components and Powders Company Market Presence, Dollars, Worldwide, 2019 32 Figure 15. Gallium Arsenide Primary Competitive Factors 35 Figure 16. Factors Impacting Ability to Compete in Gallium Arsenide Product Target Markets: 35 Figure 17. Gallium Arsenide Next Generation Semiconductor Components Market Forecasts, Dollars, Worldwide, 2020-2026 37 Figure 18. Gallium Arsenide Components Market Forecasts, Dollars, Worldwide, 2020-2026 38 Figure 19. GaAs Segment Analysis 3D Sensing in Lidar for Autonomous and Electric Vehicles, 3D Sensing in Consumer Electronics, Optical Infrastructure, Datacenters, 4G Remote Radioheads, 5G Beam Forming Units, Worldwide, 2019 to 2022 39 Figure 20. GaAs Segment Analysis 3D Sensing in Lidar for Autonomous and Electric Vehicles, 3D Sensing in Consumer Electronics, Optical Infrastructure, Datacenters, 4G Remote Radioheads, 5G Beam Forming Dollars, Worldwide, 2019 to 2022 40 Figure 21. Gallium Arsenide Formulations 41 Figure 22. Gallium Arsenide (GaAs) Wafer Market Segments by Type 42 Figure 23. Gallium Arsenide (GaAs) Wafer Market Segment by Applications 42 Figure 24. Advantages of GaAs 43 Figure 25. Advantages of CMOS 43 Figure 26. Gallium Arsenide (GaAs) Components Dollars, Regional Market Segments 2019 44 Figure 27. Gallium Arsenide (GaAs) Regional Market Segments, Dollars, and Percent, Worldwide, 2019 45 Figure 28. China Crystal Technologies Regional Market Segments, Dollars, #Shipments, and Percent, Worldwide, 2019 46 Figure 29. GaAs Segment Analysis 3D Sensing in Lidar for Autonomous and Electric Vehicles, 3D Sensing in Consumer Electronics, Optical Infrastructure, Datacenters, 4G Remote Radioheads, 5G Beam Forming Dollars, Worldwide, 2019 to 2022 48 Figure 30. GaAs and InP Segment Analysis 3D Sensing in Lidar for Autonomous and Electric Vehicles, 3D Sensing in Consumer Electronics, Dollars, Units, and Percent, Worldwide, 2019 to 2022 49 Figure 31. GaAs Segment Analysis 3D Sensing in Lidar for Autonomous and Electric Vehicles, 3D Sensing in Consumer Electronics, Optical Infrastructure, Datacenters, 4G Remote Radioheads, 5G Beam Forming Units, Worldwide, 2019 to 2022 51 Figure 32. GaAs, InP Segment Analysis Optical Infrastructure and Datacenters, Dollars, Units, and Percent, Worldwide, 2019 to 2022 52 Figure 33. GaAs Segment Analysis Optical Infrastructure and Datacenters, Dollars, Worldwide, 2019 to 2022 54 Figure 34. GaAs and InP Segment Analysis 4G Remote Radioheads, 5G Beam Forming Antennae, 5G RF Electronics, Dollars, Worldwide, 2019 to 2022 55 Figure 35. GaAs and InP Segment Analysis 4G Remote Radioheads, 5G Beam Forming Antenaes, 5G RF Electronics, Dollars, Worldwide, 2019 to 2022 57 Figure 36. GaAs and InP Segment Analysis 4G Remote Radioheads, 5G Beam Forming Antenaes, 5G RF Electronics, Dollars, Worldwide, 2019 to 2022 (Continued) 58 Figure 37. GaAs and InP Segment Analysis 4G Remote Radioheads, 5G Beam Forming Antenaes, 5G RF Electronics, Dollars, Worldwide, 2019 to 2022 59 Figure 38. GaAs Segment Analysis 4G Remote Radioheads, 5G Beam Forming Antenaes, 5G RF Electronics, Dollars, Worldwide, 2019 to 2022 60 Figure 39. SIC Segment Analysis Electric Vehicles, Smart Grid Power, Switching, Solar and Wind Energy, Dollars, Units, and Percent, Worldwide, 2019 to 2022, 61 Figure 40. GaAs Solar Power 62 Figure 41. GaAs Lasers, Sensors, Radar, and 5G Communications 63 Figure 42. GaAs Segmentation 64 Figure 43. GaAs Addressing Growing Markets 64 Figure 44. II-VI GaAs Platform + Finisar Microelectronics Design Expertise 65 Figure 45. Silicon and GaAs Crystal Structure 67 Figure 46. GaAs and Other Compound Semiconductor Characteristics 68 Figure 47. Silicon and Gallium Arsenide Energy Band Structure 69 Figure 48. GaAs Processing: Semi Insulating Starting Wafer 70 Figure 49. GaAs Processing: Semi Insulating Strip and Etch of Wafer 71 Figure 50. GaAs Etch , Connectors, and Liftoff Processing 72 Figure 51. GaAs Processing: Semi Insulating Resist, Strip, Anneal, and Layer Encapsulation Wafer 73 Figure 52. Advantages of Gallium Arsenide over Silicon 75 Figure 53. GaAs for LEDs 76 Figure 54. Comparison of SIC and GaAS Bandgaps 78 Figure 55. Gallium Nitride and Silicon Carbide Comparison of Bandgaps 81 Figure 56. Silicon Carbide. 82 Figure 57. Gallium Nitride 83 Figure 58. AXT Revenue 2019, first 3 Quarters 86 Figure 59. AXT Revenue by Segment 2019, first 3 Quarters 87 Figure 60. AXT Investments in Raw Materials 91 Figure 61. AXT Revenue Amounts by Product Type 92 Figure 62. AXT Product Applications 93 Figure 63. AXT Geographical Information 96 Figure 64. BWT 97 Figure 65. BWT Products 99 Figure 66. BWT Product Modules 100 Figure 67. BWT Beijing Laser Products 101 Figure 68. BWT Beijing Diode Laser Products 102 Figure 69. BWT High Power, High Brightness, Fiber Coupled Diode Laser 103 Figure 70. Zhongke Jingdian Information Materials Beijing 104 Figure 71. China Chrystal Technologies Factory and Headquarters 105 Figure 72. Lab China Crystal Technologies. 106 Figure 73. Top Countries Supplied by China Crystal Technologies Co., Ltd. 107 Figure 74. China Crystal Technologies Products 107 Figure 75. China Crystal Technologies Regional Market Segments, Dollars, #Shipments, and Percent, Worldwide, 2019 112 Figure 76. Cree CAB450M12XM3 (PDF) is a 1200V, 450A Silicon Carbide HalfBridge Module. 113 Figure 77. Cree High-Power Device Uses 114 Figure 78. DOWA Electronics Materials Products 114 Figure 79. Dowa Electronics Headquarters 116 Figure 80. DOWA Powders 117 Figure 81. Freiberger Corporate Headquarters 119 Figure 82. GaAs Wafer - Freiberger Compound Materials 120 Figure 83. Alta Devices Thin Layer Flexible, and Lightweight Solar Cell 127 Figure 84. Alta Devices Mass Production Tools To Support Thin Film GaAs for Solar Panels 129 Figure 85. Alta Devices Thin And Lightweight Solar Cells Provide Conversion Efficiency 131 Figure 86. IQE Operates at Wafer Production, Chip Fabrication, and Device Manufacture Levels 136 Figure 87. ICE Geographical Revenue 137 Figure 88. ICE Sites and Technologies 138 Figure 89. Texas Instruments Gate Driver Circuitry Along with 600V GaN Transistor 144 Figure 90. Yunnan Lincang Xinyuan Germanium Products 146 Figure 91. Umicore's Precious Metals Facility in Hoboken, Belgium. 147 Figure 92. Umicore SA’s Large Metal Manufacturing Complex in Hoboken 148 Figure 93. London Gold Bar Manufactured by the Umicore Group 149 Figure 94. Umicore Revenue by Segment 150 Figure 95. Umicore Revenue by Geography 151 Figure 96. II-VI GaAs Applications 153 Figure 97. II-VI GaAs Features 154 Figure 98. 14G Photodiode Top Contact 155 Figure 99. II-VI’s Compound Semiconductor Photonic Solutions Segment 156 Figure 100. II-VI’s Key End Markets 157 Figure 101. II-IV Two Six Market Segments 159 Figure 102. II-VI Core and Growth Markets 160 Figure 103. II-VI Customer Base 161 Figure 104. II-VI Revenue Growth Brought by Transformative Acquisitions 162 Figure 105. II-VI Transformative Acquisitions 163 Figure 106. Finisar Brings Significant Next-Generation Technologies For Communications, 3D Sensing, and LiDAR Enabling New Market Growth 164 Figure 107. II-VI Addressing Multiple Strong and Growing Markets 165 Figure 108. II-VI 3D Sensing and LiDAR 166 Figure 109. II-VI Power Electronics for Green Energy 167 Figure 110. II-VI Power Electronics for Green Energy 168 Figure 111. II-VI Industrial Laser Materials Processing 169 Figure 112. II-VI Aerospace & Defense 170 Figure 113. II-VI EUV Lithography 171 Figure 114. II-VI Segment Revenue by End Markets for Full Year FY19 172 Figure 115. II-VI Revenue Percent by Segment FY 2019 173 Figure 116. II-VI Revenue by Segment FY 2019 174
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